Broadcom AFBR-S4N44P163 4x4 Photodiode is an NUV Silicon Photomultiplier (SiPM) array designed for the ultra-sensitive precision counting of single photons. This photodiode comes with a high packing density of the single chips that is achieved using Through-Silicon-Via (TSV) technology. The AFBR-S4N44P163 4x4 photodiode offers excellent uniformity of gain and excellent uniformity of breakdown voltage of 180mV (3 sigma). This photodiode is available with a highly transparent glass protection layer. The AFBR-S4N44P163 4x4 photodiode operates at -20°C to 50°C temperature range. Applications include X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, flow cytometry, and astrophysics.
Features
High PDE of more than 55% at 420nmHigh fill factorsExcellent SPTR and CRTExcellent uniformity of breakdown voltage 180mV (3 sigma)Excellent uniformity of gainWith TSV technology (4-side tiling arrays)15.9 x 15.9mm
2 size 30 x 30μm
2 Cell pitch
Applications
X-ray and gamma-ray detectionGamma-ray spectroscopySafety and securityNuclear medicinePositron emission tomographyLife sciencesFlow cytometry
