Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance. The devices combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge and crossover loss, and smaller reverse recovery charge.
Features
JEDEC-qualified GaN technologyJunction temperature rating of 175°CDynamic R
DS(on) production testedRobust design, defined by
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low Q
RRReduced crossover loss
Applications
AutomotiveDatacom
