UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. The configuration in which a high-performance SiC fast JFET is co-packaged with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. The SiC FETs offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings.
Features
27mΩ to 150mΩ on-resistance range (typical R
DS(on))175°C maximum operating temperatureExcellent reverse recovery
Applications
EV chargingPV invertersSwitch mode power supplies
